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  2013 - 01 w i lla s e l ee ct r o n i c c o r p. 3 . 0 a mp gl ass p ass i v a t ed s uper f ast r ec t i f i e rs - 50 ~ 1000 vo lt s smb p acka ge f ea tur es ? g las s pa ssi vated c hi p ? i deal f o r s u r f a c e m oun t e d appli c a t ion s ? lo w lea k ag e cu rr en t ? met allu rgic ally bon ded co ns tr ucti on ? m ois ture sen si tivi ty le vel 1 ? rohs pr odu ct for pa cking c od e su ff ix g ha l oge n fr ee pr odu ct for pa cking c od e suffix h m ec hanic al date ? case: mol de d p las t ic , smb( do 214 aa) ? epo xy : ul 94 v-0 ra te flame retar da nt ? lead : s olderabl e pe r mil-std- 202, me thod 20 8 guarant eed smb(do- 21 4aa) ? p ola rity: co lo r b an d de notes ca t ho de end ? mounting p osit ion : any ? w ei gh t: 0. 00 4 oun ce , 0. 104 gram (app roximate) dim en si ons in inc hes and (m ill im ete rs ) m aximum ratings and electro ni cal char ac te ri st ics ra tings at 25 ambient temp era tur e unl es s ot he rwise spe cifie d. si ngle phase ha lf wave, 60 hz, resi st ive of inductive loa d. fo r capacitive load, de rate cu rre n t b y 20% r a t i n g s y m b o l s fm 301b fm302b fm303b fm304b fm305b fm306b fm307b uni t s ma r k i ng c ode 3b1 3b2 3b3 3b4 3b5 3b6 3b7 maximum recurrent p ea k rev er se volt age v r rm 50 100 200 400 600 800 1000 v o l t s maximum rms vol ta ge v r m s 35 70 140 280 420 560 700 v o l t s maximum dc blocking vol tag e v dc 50 100 200 400 600 800 1000 v o l t s maximum av er age fo rwar d rectifier cu rrent 0.3 75 (9.5 mm ) lead le ng th at fig.1 i f( av ) 3 .0 amps p ea k fo rward su rg e current 8 .3 ms sing le ha lf si ne -wa ve sup er imposed on rated l oa d (jedec meth od) i fsm 1 00 amps maximum ins ta n ta neou s forward voltage at 3.0a dc v f 1 .1 v o l t s maximum dc reverse current at rated dc blocking voltage @ ta=25 i r 5 .0 a @ ta=1 00 1 0 0 typical th er mal re si stan ce (note 2 ) r ja 40 /w r jc 1 5 typical junc ti on c apa ci ta n ce (note 1) c j 60 pf ope ra ting an d storage temperature r an ge t j ,t st g - 5 5 ~ 1 50 not es: 1 . measured at 1mhz and app li ed re ve rse vo lt ag e of 4.0v dc. 2. th er mal resist an ce j un cti on to ambi ent, 10.0* 10.0 mm 2 coppe r pads to ea ch termi nal. th er mal resis ta nce j un cti on to case, 10.0* 10.0 mm 2 coppe r pad s to each termi na l. fm301 % thru fm307 % .191(4.85) .160(4.06) .115(3.94) .130(3.30) .086(2.20) .075(1.91) .220(5.59) .199(5.05) .096(2.44) .083(2.13) .012(0.30) .006(0.15) .060(1.52) .029(0.75) .008(2.03) .001(0.02)
2013 - 01 w i lla s e l ee ct r o n i c c o r p. peak forward surge current, (a) average forward current, (a) junction capacitance, ( pf ) instantaneous reverse current, (ua) instantaneous forward current, (a) ra ting and charac teristics curv es 3.0 2.5 2.0 fig. 1 - typical forward current derating curve 20 10 4 2 1.0 fig. 2 - typical instantaneous forward characteristics 1.0 .5 0 single phase half wave 60hz resistive or inductive load 0 25 50 75 100 125 150 175 ambient temperature, ( ) .2 .1 .04 .02 .01 t j = 25 pulse width=300u s 1% d uty cycle .6 .8 1.0 1.2 1.4 1.5 instantaneous forward voltage, (v) fig. 3 - maximum non - repetitive forward surge current 250 fig. 4 - typical reverse characteristics 10 200 150 100 50 0 8.3ms single half sine -wave (jeded method) 1 2 4 6 8 10 20 40 60 80 100 number of cycles at 60hz 4 1.0 .4 .1 .04 .01 t j = 25 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage, (%) fig. 5 - typical junction capacitance 200 100 60 40 20 t j = 25 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 reverse voltage, ( v ) fm301 % thru fm307 % 3 . 0 a mp gl ass p ass i v a t ed s uper f ast r ec t i f i e rs - 50 ~ 1000 vo lt s smb p acka ge


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